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FDC8878
N-Channel PowerTrench ? MOSFET
30 V, 8.0 A, 16 m Ω
Features
Max r DS(on) = 16 m Ω at V GS = 10 V, I D = 8.0 A
Max r DS(on) = 18 m Ω at V GS = 4.5 V, I D = 7.5 A
High performance trench technology for extremely low r DS(on)
Fast switching speed
RoHS Compliant
January 2012
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench ? process that has
been optimized for r DS(on) , switching performance.
Applications
Primary Switch
S
D
S
4
3
G
D
D
5
2
D
G
D
Pin 1
D
D
6
1
D
SuperSOT TM -6
MOSFET Maximum Ratings T A = 25 °C unless otherwise noted
Symbol
V DS
Drain to Source Voltage
Parameter
Ratings
30
Units
V
V GS
Gate to Source Voltage
(Note 3)
±20
V
Drain Current -Continuous (Package limited) T C = 25 °C
8.0
I D
-Continuous
T A = 25 °C
(Note 1a)
8.0
A
-Pulsed
32
P D
T J , T STG
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
(Note 1a)
(Note 1b)
1.6
0.8
-55 to +150
W
°C
Thermal Characteristics
R θ JC
R θ JA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
(Note 1a)
30
78
°C/W
Package Marking and Ordering Information
Device Marking
.888
Device
FDC8878
Package
SSOT-6
Reel Size
7 ’’
Tape Width
8 mm
Quantity
3000 units
?2012 Fairchild Semiconductor Corporation
FDC8878 Rev.C2
1
www.fairchildsemi.com
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